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Na vašem soukromí nám záleží
GOODRAM SSD PX500 512GB M.2 2280, NVMe (R:2000/ W:1600MB/s) Gen.2
GOODRAM SSD PX500 512GB M.2 2280, NVMe (R:2000/ W:1600MB/s) Gen.2
958 Kč
792 Kč bez DPH
Dostupnost: Dodání 3 dny
Part no.: SSDPR-PX500-512-80-G2
Kód produktu: 98726313
Výrobce: GoodRAM
Váha: 0,022 kg
Popis produktu
By providing up to 4x better sequential and random transfer performance compared to SATA III Solid State Drives and lower latency than AHCI drives, GOODRAM PX500 gen.2 pumps-up your PC. The performance will improve the work of more demanding customers, offering a reading of up to 2050MB/s. It is also perfect as a stand-alone drive, as well as an add-on to a hard disk in desktops and laptops. Available capacities for the PX500 gen.2 make the drive work in both roles.
high-speed PCIe gen 3 x4 interface
wsparcie NVMe 1.3
3D NAND flash technology
heat-dissipating thermal pad
TECHNICAL SPECIFICATIONS
PERFORMANCE
Sequential read performance (max.)
2 000 MB/s
Sequential write performance (max.)
1 600 MB/s
Random read performance (4k QD64) (max.)
173 000 IOPS
Random write performance (4K QD64) (max.)
140 000 IOPS
PHYSICAL PARAMETERS
Capacity
512 GB
Form Factor
80 x 22 x 3,5 mm
Interface
M.2 PCIe NVMe gen 3 x4 (M key)
NAND flash
3D NAND flash
Temperature
Operational: 0 - 70°C Storage: -45 - 85°C
More information on the manufacturer s website: https://www.goodram.com/cs/
Popis produktu
PX500 GEN.2 NVME PCIE GEN 3 X4 SSDBy providing up to 4x better sequential and random transfer performance compared to SATA III Solid State Drives and lower latency than AHCI drives, GOODRAM PX500 gen.2 pumps-up your PC. The performance will improve the work of more demanding customers, offering a reading of up to 2050MB/s. It is also perfect as a stand-alone drive, as well as an add-on to a hard disk in desktops and laptops. Available capacities for the PX500 gen.2 make the drive work in both roles.
high-speed PCIe gen 3 x4 interface
wsparcie NVMe 1.3
3D NAND flash technology
heat-dissipating thermal pad
TECHNICAL SPECIFICATIONS
PERFORMANCE
Sequential read performance (max.)
2 000 MB/s
Sequential write performance (max.)
1 600 MB/s
Random read performance (4k QD64) (max.)
173 000 IOPS
Random write performance (4K QD64) (max.)
140 000 IOPS
PHYSICAL PARAMETERS
Capacity
512 GB
Form Factor
80 x 22 x 3,5 mm
Interface
M.2 PCIe NVMe gen 3 x4 (M key)
NAND flash
3D NAND flash
Temperature
Operational: 0 - 70°C Storage: -45 - 85°C
More information on the manufacturer s website: https://www.goodram.com/cs/